s mhop microelectronics c orp. a SP8651 symbol v ds v gs i dm 95 w a p d c 1.32 -55 to 150 i d units parameter 24 10 60 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 24v 10a 17.5 @ vgs=3.1v 14.0 @ vgs=4.5v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed d a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 3.7 www.samhop.com.tw may,29,2014 1 details are subject to change without notice. d t a =25 c esd protected. t a =70 c 8 a t a =70 c 0.84 w dual n-channel enhancement mode field effect transistor green product 21.0 @ vgs=2.5v 15.0 @ vgs=4.0v 16.0 @ vgs=3.7v 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8 e as mj single pulse avalanche energy c 56 s mini 8 p i n 1 a
symbol min typ max units bv dss 24 v 1 i gss 1 ua v gs(th) 0.5 v m ohm v gs =4.5v , i d =5a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =1ma v ds =20v , v gs =0v v gs = 8v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua on characteristics SP8651 ver 3.7 1.1 1.5 g fs 28 s v sd q g 122 nc 463 nc q gs 1200 nc q gd 920 t d(on) 12.5 ns t r 1.7 ns t d(off) 6.5 ns t f ns gate-drain charge switching characteristics gate-source charge v dd =20v i d =5a v gs =4.5v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =10v , i d =5a forward transconductance diode forward voltage v gs =2.5v , i d =5a m ohm b v ds =20v,i d =10a, v gs =4.5v drain-source diode characteristics and maximum ratings v gs =0v,i s =10a 0.85 1.2 v notes a.surface mounted on fr4 board of 1 inch 2 , 1oz. b.guaranteed by design, not subject to production testing. c.starting t j =25 c,l=0.5mh,v dd = 10v. d.drain current limited by maximum junction temperature. www.samhop.com.tw may,29,2014 2 11.5 14.0 16.0 21.0 v gs =3.1v , i d =5a m ohm 13.5 17.5 m ohm v gs =4.0v , i d =5a 12.0 15.0 m ohm v gs =3.7v , i d =5a 12.5 16.0 8.0 11.0 9.5 8.5 9.0
SP8651 ver 3.7 www.samhop.com.tw may,29,2014 3 0 0 20 120 100 80 60 40 150 125 100 75 50 25 175 t a - ambient temperature - c dt - percentage of rated power - % derating factor of forward bias safe operating area 0 0 0.5 3 2.5 2 1.5 1 150 125 100 75 50 25 175 t a - ambient temperature - c pt - total power dissipation - w total power dissipation vs. ambient temperature mounted on fr-4 board of 1 inch 2 , 1oz 0.1 1 10 10 0.1 100 0.01 forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a 1 transient thermal resistance vs. pulse width 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 single pulse pw - pulse width - s rth(ch-a) - transient thermal resistance - c/w 0.0001 mounted on fr-4 board of 1 inch 2 , 1oz r ds (on) limit v gs =4.5v single pulse t a =25 c 10us 1 00us 1ms 10 m s d c 1s
SP8651 ver 3.7 www.samhop.com.tw may,29,2014 4 0 0 12 30 24 1 0.8 0.6 0.4 0.2 v ds - drain to source voltage - v i d - drain current - a drain current vs. drain to source voltage v gs = 4.5 v 3.1 v 3.7 v 2.5 v 0.01 0 0.1 100 10 1 2.5 2 1.5 1 0.5 v gs - gate to source voltage - v i d - drain current - a forward transfer characteristics 3 25 c 75 c 125 c t a = -25 c -50 1.3 1.1 0.7 150 100 50 0 t ch - channel temperature - c v gs(off) - gate to source cut-off voltage - v gatebto soure cut-off voltage vs. channel temperature i d = 1.0ma 0.01 0.01 0.1 100 10 1 100 10 1 0.1 i d - drain current - a . y fs . - forward transfer admittance - s forward transfer admittance vs. drain current 1.2 t a = -25 c 25 c 75 c 125 c 0 10 40 30 20 100 10 1 0.1 i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. drain current v gs = 2.5 v 3.1 v 4.0 v 4.5 v 0 0 10 40 30 20 8 6 4 2 v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage i d = 5 a 12 10 4.0 v 3.7 v 0.8 0.9 1.0 6 18
SP8651 ver 3.7 www.samhop.com.tw may,29,2014 5 0.01 0.1 100 10 1 0.6 0.4 0.2 0 v f(s-d) - source to drain voltage - v i f - diode forward current - a source to drain diode forward voltage 0 -50 15 10 5 150 100 50 0 t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. channel temperature 20 4.0 v 4.5 v 1.2 1.0 0.8 v gs = 0 v 3.7 v i d = 5a 3.1 v v gs = 2.5 v 1.4 25 30 10 0.1 100 1000 10 1 i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns switching characteristics v dd = 20.0 v v gs = 4.5 v r g = 6 t d(on) t d(off) t r t f q g - gate charge -nc v gs - gate to drain voltage - v dynamic input characteristics 0 0 4 3 2 12 9 6 3 i d = 10 a 1 12 v 20 v 15 v dd = 5 v
SP8651 www.samhop.com.tw may,29,2014 6 package outline dimensions ver 3.7 top view s mini 8 bottom view side view symbols millimeters a a1 b c d e e1 min max 0.700 0.900 0.000 0.050 0.240 0.350 0.080 0.250 e l l1 01 0.650 bsc 0.200 0.450 0.000 0 o 12 o nom 0.800 0.300 0.152 0.375 0.100 10 o l1 d l e e1 e 01 c a a1 2.800 2.900 3.000 2.700 2.800 2.900 2.200 2.300 2.400 b
8651 xxxxxx top marking definition s mini 8 product no. wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no. pin 1 SP8651 www.samhop.com.tw may,29,2014 7 ver 3.7 samhop logo
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